Nuclear Techniques ›› 2016, Vol. 39 ›› Issue (6): 60401-060401.doi: 10.11889/j.0253-3219.2016.hjs.39.060401


Design of a 250-MHz solid-state power amplifier

DING Hongli1,2, ZHAO Minghua1, XIAO Chengcheng1, ZHONG Shaopeng1   

  1. 1 Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Jiading Campus, Shanghai 201800, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2016-01-27 Revised:2016-04-12 Online:2016-06-10 Published:2016-06-12
  • Supported by:

    Supported by the Knowledge Innovation Project of Chinese Academy of Sciences (No.455011061)


Background: The development trend of radio frequency power source systems is to replace vacuum power source devices with solid-state power amplifiers. Purpose: This paper introduces the design process of a solid-state power amplifier operating at a frequency of 250 MHz. Methods: A BLF578XR transistor manufactured by NXP semiconductor has been used in the amplifier model. The design of matching network adopts the method of combining transmission lines and lumped elements. The initial value in matching network was achieved through theoretical calculation, then simulated and optimized by the software ADS (Advanced Design System). Results: The results of measurement showed that the output power of power amplifier module was over 850 W, power gain was over 26 dB, and power added efficiency was over 60%. Conclusion: The designed parameters were all achieved in the power amplifier module, which can be further applied in scientific use.

Key words: Power amplifier, Solid-state power source, Matching network

CLC Number: 

  • TL503.5