Nuclear Techniques ›› 2015, Vol. 38 ›› Issue (2): 20401-020401.doi: 10.11889/j.0253-3219.2015.hjs.38.020401

• NUCLEAR ELECTRONICS AND INSTRUMENTATION • Previous Articles     Next Articles

Analysis on electrical performance of GaN and Si diodes as betavoltaic batteries energy converters

WANG Guanquan YANG Yuqing HU Rui LIU Yebing XIONG Xiaoling LUO Shunzhong   

  1. (Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China)
  • Received:2014-09-15 Revised:2014-11-15 Online:2015-02-10 Published:2015-02-02

Abstract: Background: Betavoltaic battery is a hot spot in micro isotope batteries due to its advantages of small volume, maintenance-free, high energy conversion efficiency, ease of integration and so on. GaN is a promising wide bandgap semiconductor for energy converter of betavoltaic battery. Purpose: This study aims to explore the performance of GaN diode as the energy converter of betavoltaic battery, and to compare it with the performance of Si diode. Methods: Two kinds of GaN and Si PiN diodes were prepared to be the energy converters of betavoltaic batteries, and irradiated by 63Ni and 3H radioactive sources. Their electrical performances, temperature and irradiation tolerance, were compared. Results: The results showed that the Voc of GaN diode was higher than that of Si diode, while Isc was lower; the electrical performance of GaN diode under the conditions of high temperature and high energy irradiation were better than that of Si diode. Conclusion: GaN diode could increase the Voc of betavoltaic battery, and improve electrical performance under high temperature and high energy irradiation conditions.

Key words: Betavoltaic, GaN diodes, Si diodes, Electrical performance