Journal of Radiation Research and Radiation Proces ›› 2017, Vol. 35 ›› Issue (1): 10701-010701.doi: 10.11889/j.1000-3436.2017.rrj.35.010701


Numerical evaluation on the feasibility of dose rate switching technique

ZHANG Xiuyu1,2, FENG Xiaolong1,2, LI Hongliang1,2, SONG Yu1,2, DAI Gang1,2   

  1. 1 Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621000, China;
    2 Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
  • Received:2016-10-24 Revised:2017-01-08 Online:2017-02-20 Published:2017-02-20
  • Supported by:

    Supported by Science Challenge Project (JCKY2016212A503),National Natural Science Foundation of China (NSFC Grant No.11404300) and President Funding of Chinese Academy of Engineering Physics (President Funding of CAEP No.2014-1-100)


For the sake of evaluating the feasibility of dose rate switching technique, systematic numerical simulations on the MIS (Metal insulator semiconductor) structure was done based on a quantitative physical model and the experimental conditions of dose rate switching technique, regarding hydrogen concentration, initial defect concentrations and temperature as variables. It turned out that the feasibility of the dose rate switching technique is strongly dependent on the hydrogen concentration and initial defects concentrations in the oxide layer of the bipolar devices. Therefore, the experiments of dose rate switching technique have possible failures on part of devices and circuits.

Key words: Dose rate switching, Acceleration methods, Numerical simulation, Hydrogen concentration, Initial defect concentrations

CLC Number: 

  • TL99