Journal of Radiation Research and Radiation Processing ›› 2020, Vol. 38 ›› Issue (5): 60-66.doi: 10.11889/j.1000-3436.2020.rrj.38.050701


Influence of total ionizing dose effects on domestic SiGe BiCMOS under different bias conditions

WANG Libin1,2,3,WANG Xin2,3,WU Xue4,LI Xiaolong2,3,LIU Mohan2,3,LU Wu1,2,3()   

  1. 1.School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
    2.Key Laboratory of Special Environmental Functional Materials and Devices, Xinjiang Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
    3.Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China
    4.Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China
  • Received:2020-03-09 Revised:2020-04-28 Accepted:2020-04-28 Online:2020-10-20 Published:2020-10-19
  • Contact: LU Wu
  • About author:WANG Libin (male) was born in June 1992, and obtained his bachelor degree from YanTai University in 2015. Now he is a graduate student at Xinjiang University, majoring in nuclear technology and applications
  • Supported by:
    Science and Technology on Analog Integrated Circuit Laboratory(JCKY2019210C055);the Tianchi Doctoral Plan of Autonomous Region (under Grant No [2018]111), and West Light Foundation of the Chinese Academy of Sciences(2018-XBQNXZ-B-003)


This paper evaluates the effects of the total ionizing dose (TID) radiation 0.35 μm domestic SiGe BiCMOS devices under different bias conditions. 60Co gamma irradiation was performed at a high dose rate of 1 Gy(Si)/s. The results show that the SiGe BiCMOS devices enable excellent tolerance to total ionizing effect, reaching multi-kGy(Si) total ionizing dose tolerance, and the base currents are more sensitive to radiation. Under different bias conditions, when the total dose accumulated to 12 kGy(Si), the reverse bias irradiated damage is the largest, followed by the zero bias, and the forward bias irradiation presents minimum damage. We found that the main mechanism of TID is that the high dose rate radiation and the edge electric field introduced by the bias conditions influences the oxide trap charges and interface state generation in the oxide layer, which leads to an increase in the radiation sensitive zone of the base pole and an increase in the base current, thus reducing the current gain of the device.

Key words: SiGe BiCMOS, Bias conditions, Total ionization dose (TID), Oxide trap charges, Interface states

CLC Number: 

  • O77+4