Journal of Radiation Research and Radiation Proces ›› 2017, Vol. 35 ›› Issue (2): 20401-020401.doi: 10.11889/j.1000-3436.2017.rrj.35.020401

• RADIATION TECHNOLOGY APPLICATION • Previous Articles     Next Articles

Mutation breeding of ethanol-producing yeast Saccharomyces cerevisiae by low-energy nitrogen ion implantation and UV rays

YU Long, YAO Chiya, WU Xiaofei, LI Yuyan, ZHANG Di, YU Muyao   

  1. College of Biotechnology and Pharmaceutical Engineering, Nanjing University of technology, Nanjing 210000, China
  • Received:2016-11-09 Revised:2017-01-06 Online:2017-04-20 Published:2017-04-14
  • Supported by:

    Supported by the National High-tech Research Development Plan of China (863 Program, No. 2012AA023400)

Abstract:

The ethanol-producing yeast Saccharomyces cerevisiae was induced by N+ implantation with an output power of 18 keV and a dose of 400×1014 cm-2, depending on the survival and mutation rates. The UV exposure time was 60 s. Under optimized conditions, the strain achieved the highest positive mutation and lethality rates. A mutant strain SC-N9015 was selected; the ethanol yield of this strain was 15.53%, whereas that of the parental strain was 14.65%. Further, evaluation of ethanol yield over successive generations indicated the hereditary stability of the mutations. The study shows that the combination of low energy N+ implantation with UV rays is an efficient method for mutation breeding of S. cerevisiae.

Key words: Saccharomyces cerevisiae, Low energy N+ implantation, UV rays, Irradiation, Mutation breeding

CLC Number: 

  • TL99